PART |
Description |
Maker |
GS8662T09E-333 |
72Mb SigmaCIO DDR-II Burst of 2 SRAM 8M X 9 DDR SRAM, 0.45 ns, PBGA165
|
GSI Technology, Inc.
|
GS8342S08E-167 GS8342S08GE-167 GS8342S08GE-167I GS |
36Mb Burst of 2 DDR SigmaSIO-II SRAM
|
GSI[GSI Technology]
|
MT54W4MH9B MT54W4MH8B MT54W1MH36B-5 MT54W1MH36B-7. |
36Mb QDRII SRAM 2-WORD BURST 36Mb QDR⑩II SRAM 2-WORD BURST ⑩分6MB四年防务审查II SRAM字爆 36Mb QDR?┥I SRAM 2-WORD BURST
|
Micron Technology, Inc.
|
IS61DDP2B22M18A IS61DDP2B21M36A/A1/A2 IS61DDP2B22M |
2Mx18, 1Mx36 36Mb DDR-IIP (Burst 2) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
GS832218B-133 GS832218B-133I GS832218B-150 GS83221 |
64K 3.3 VOLT SERIAL CONFIGURATION PROM 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 GIGABASE 350 CAT5E PATCH 1 FT, SNAGLESS, WHITE 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万18100万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36,为512k × 72分配36MBS /双氰胺同步突发静态存储器 DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35 (GS832218 / GS832236 / GS832272) S/DCD Sync Burst SRAMs
|
ETC Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers List of Unclassifed Man...
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GS8322V18GB-166I GS8322V18GB-225 GS8322V18GE-225I |
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 2M X 18 CACHE SRAM, 7 ns, PBGA119 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 2M X 18 CACHE SRAM, 7 ns, PBGA165 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 1M X 36 CACHE SRAM, 7 ns, PBGA119 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 512K X 72 CACHE SRAM, 8 ns, PBGA209 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 2M X 18 CACHE SRAM, 8.5 ns, PBGA119 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 512K X 72 CACHE SRAM, 8.5 ns, PBGA209 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 512K X 72 CACHE SRAM, 7.5 ns, PBGA209 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 1M X 36 CACHE SRAM, 8.5 ns, PBGA165 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 1M X 36 CACHE SRAM, 8 ns, PBGA165 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 2M X 18 CACHE SRAM, 6.5 ns, PBGA119 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 1M X 36 CACHE SRAM, 7 ns, PBGA165 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 1M X 36 CACHE SRAM, 8 ns, PBGA119 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 2M X 18 CACHE SRAM, 8.5 ns, PBGA165 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 2M X 18 CACHE SRAM, 8 ns, PBGA119 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 1M X 36 CACHE SRAM, 8.5 ns, PBGA119
|
GSI Technology, Inc. Electronic Theatre Controls, Inc.
|
GS8342D08E-250 GS8342D08E-250I GS8342D08E-333 GS83 |
36Mb SigmaQuad-II Burst of 4 SRAM
|
GSI[GSI Technology]
|
GS8321EV18E-225 GS8321EV18E-200 GS8321EV18GE-200 G |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
GS832118E-150IV GS832118E-133IV GS832118E-133V GS8 |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
CY7C1418AV18-267BZC |
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
|
CYPRESS SEMICONDUCTOR CORP
|
GS832136GE-133I |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 36 CACHE SRAM, 8.5 ns, PBGA165
|
GSI Technology, Inc.
|
GS8321E32GE-250I GS8321E32E-150I |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 32 CACHE SRAM, 5.5 ns, PBGA165 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 32 CACHE SRAM, 7.5 ns, PBGA165
|
GSI Technology, Inc.
|
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